Abstract
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results indicate that arsenic was successfully incorporated as acceptors in MBE-HgCdTe layers after a low temperature anneal. Secondary ion mass spectrometry and Hall effect measurements confirm that arsenic is incorporated with an activation yield of up to 100%. This work confirms that arsenic can be used as an effective dopant of MBE-HgCdTe after a low temperature annealing under Hg-saturated conditions.
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Sivananthan, S., Wijewarnasuriya, P.S., Aqariden, F. et al. Mode of arsenic incorporation in HgCdTe grown by MBE. J. Electron. Mater. 26, 621–624 (1997). https://doi.org/10.1007/s11664-997-0205-6
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DOI: https://doi.org/10.1007/s11664-997-0205-6