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HgCdTe Films Grown by MBE on CZT(211)B Substrates

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Abstract

An investigation of the properties of HgCdTe films grown by MBE and devices made from such films are reported. Through the precise control of growth conditions and the screening of the Zn component of CZT(211)B substrates, high-quality HgCdTe films were successfully deposited onto the CZT(211)B substrates and characterized by x-ray diffraction rocking curve analysis and etch pit density analysis. X-ray rocking curve (422) reflection full-width at half-maximum (FWHM) of less than 15 arcsec was obtained for Hg0.7Cd0.3Te epitaxial films, and etch pit density (EPD) of about 2 × 104 cm−2 was observed. At the same time, the relationship between the FWHM of the x-ray double-crystal rocking curve and EPD was confirmed. By optimizing the pretreatment process of the CZT(211)B substrate, a further significant reduction in HgCdTe macrodefect densities to 54 cm−2 to 1000 cm−2 was observed on CdZnTe, including occasional occurrences of very few or no large "void clusters" that are often observed. Planar p-on-n HgCdTe mid-wave infrared (MWIR) focal plane arrays (FPAs) were fabricated based on MBE in situ indium doping and arsenic ion implantation technology. The temperature-dependent performance of planar p-on-n MWIR FPAs shows that the device has the ability to operate at high temperature of about 140 K with high performance.

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Acknowledgments

This work is supported by the Kunming Institute of Physics. The authors wish to thank all of their colleagues at the Kunming Institute of Physics who have worked together on the development of the HgCdTe described in this paper.

Funding

Funding is provided by the National Key Research and Development Program of China (No. SQ2020YFB200190).

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  1. Kunming Institute of Physics, Kunming, 650223, Yunnan, China

    G. Qin, J. C. Kong, J. Yang, Y. Ren, Y. H. Li, C. Z. Yang, H. F. Li, J. Y. Wang, J. Y. Yu, Q. Qin, J. Zhao & P. Zhao

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Qin, G., Kong, J.C., Yang, J. et al. HgCdTe Films Grown by MBE on CZT(211)B Substrates. J. Electron. Mater. 52, 2441–2448 (2023). https://doi.org/10.1007/s11664-022-10193-w

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