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Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

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Abstract

We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm−3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10−4 and 2.4(±0.2) × 10−5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 500-712, Kwangju, Korea

    Ja-Soon Jang, Chang-Won Lee, Seong-Ju Park & Tae-Yeon Seong

  2. School of Electrical and Computer Engineering, Georgia Institute of Technology, 30332, Atlanta, GA

    I. T. Ferguson

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  1. Ja-Soon Jang
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  2. Chang-Won Lee
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  3. Seong-Ju Park
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  4. Tae-Yeon Seong
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  5. I. T. Ferguson
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Jang, JS., Lee, CW., Park, SJ. et al. Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN. J. Electron. Mater. 31, 903–906 (2002). https://doi.org/10.1007/s11664-002-0181-9

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  • DOI: https://doi.org/10.1007/s11664-002-0181-9

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