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Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties

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Abstract

Hydrogen is an electronically active impurity in Si with some unique properties—it can passivate other impurities and defects, both-at the interface and in the bulk. Controlled introduction of H can lower interface state density, and thereby improve Schottky and MOS devices, and can reduce bulk recombination to increase minority-carrier-controlled device performance. However, excess H can also in troduce defects that can be detrimental to the device properties. Although H is typically introduced by exposing the device to a fluc of atomic species, a suitable device configuration can be passivated by thermal treatment in forming gas. This paper addresses some basic issues of deviee processing in H ambient to improve device performance.

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Authors and Affiliations

  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401, Golden, CO

    Bhushan Sopori & Yi Zhang

  2. Department of Physics, New Jersey Institute of Technology, 16 Warren Street, 07102, Newark, NJ

    Yi Zhang & N. M. Ravindra

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  1. Bhushan Sopori
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  2. Yi Zhang
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  3. N. M. Ravindra
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Sopori, B., Zhang, Y. & Ravindra, N.M. Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties. J. Electron. Mater. 30, 1616–1627 (2001). https://doi.org/10.1007/s11664-001-0181-1

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  • DOI: https://doi.org/10.1007/s11664-001-0181-1

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