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Separation Mechanism of Primary Silicon from Hypereutectic Al-Si Melts Under Alternating Electromagnetic Fields

  • Symposium: Advances in Solidification of Metallic Alloys under External Fields
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Abstract

Solar grade silicon (SOG-Si) and hypereutectic Al-Si alloys with low silicon (silicon composition below 25 pct) can be successfully obtained by separation of hypereutectic Al-Si alloy with high silicon (silicon composition above 30 pct) under an alternating electromagnetic field after post-processing. To explore the separation mechanism in detail, experiments were conducted in this study using a high-frequency induction furnace with different pulling conditions of the crucible which is loaded with Al-45 wt pct Si melt. Results demonstrate that the separation of hypereutectic Al-Si alloy is feasible through either a pull-up or drop-down process. The height of each separation interface between the compact and sparse parts of the primary silicon decrease as the pull-up distance rose. When the pulling rate is very low, resultant morphologies of compact primary silicon are rounded and polygonal, allowing for more effective separation of the primary silicon. A novel physical model is presented here based on the experimental results and simulation. The model can be used to effectively describe the separation mechanism of primary silicon from hypereutectic Al-Si melts under alternating electromagnetic fields.

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Acknowledgments

This work was supported by NSFC project (No. 51466005 and U1137601), the Key project of Yunnan Provincial Department of Education (2013Z122), the talent training Foundation of Kunming University of Science and Technology (KKZ3201352011).

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Authors and Affiliations

  1. State Key Laboratory of Complex Nonferrous Metal Resources Cleaning Utilization in Yunnan Province/The National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, P.R. China

    Haiyang Xue (Student), Guoqiang Lv (Assistant Professor), Wenhui Ma (Professor) & Jie Yu (Assistant Professor)

  2. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, P.R. China

    Haiyang Xue (Student), Guoqiang Lv (Assistant Professor), Wenhui Ma (Professor), Daotong Chen (Student) & Jie Yu (Assistant Professor)

  3. Key Laboratory of Non-Ferrous Metals Vacuum Metallurgy of Yunnan Province/Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming, 650093, P.R. China

    Haiyang Xue (Student), Guoqiang Lv (Assistant Professor), Wenhui Ma (Professor), Daotong Chen (Student) & Jie Yu (Assistant Professor)

Authors
  1. Haiyang Xue
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  2. Guoqiang Lv
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  3. Wenhui Ma
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Corresponding author

Correspondence to Guoqiang Lv.

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Manuscript submitted November 26, 2014.

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Xue, H., Lv, G., Ma, W. et al. Separation Mechanism of Primary Silicon from Hypereutectic Al-Si Melts Under Alternating Electromagnetic Fields. Metall Mater Trans A 46, 2922–2932 (2015). https://doi.org/10.1007/s11661-015-2889-1

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  • DOI: https://doi.org/10.1007/s11661-015-2889-1

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