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Structural and electrical properties of ZnO films on freestanding thick diamond films

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Chinese Science Bulletin

Abstract

In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600°C and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.

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Authors and Affiliations

  1. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, 116024, China

    Jian Sun, YiZhen Bai & Xin Jiang

  2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China

    Jian Sun, YiZhen Bai, JingChang Sun & GuoTong Du

  3. College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130023, China

    GuoTong Du

Authors
  1. Jian Sun
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  2. YiZhen Bai
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  3. JingChang Sun
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  4. GuoTong Du
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  5. Xin Jiang
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Corresponding author

Correspondence to YiZhen Bai.

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Supported by the National Natural Science Foundation of China (Grant No. 60307002)

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Sun, J., Bai, Y., Sun, J. et al. Structural and electrical properties of ZnO films on freestanding thick diamond films. Chin. Sci. Bull. 53, 2931–2934 (2008). https://doi.org/10.1007/s11434-008-0398-y

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  • DOI: https://doi.org/10.1007/s11434-008-0398-y

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