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Structural and Electrical Properties of High C-Orientation Gan Films on Diamond Substrates with ECR-PEMOCVD

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Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing

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Abstract

Preferred orientation GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors and different N2 flux is used to achieve high quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD), atomic force microscopy (AFM), electron probe microanalysis (EPMA) and Hall Effect Measurement (HL). The results show that the high quality GaN films deposited at the proper N2 flux display a fine structural and electrical property and the Ga/N atomic ratio plays an important role in the electrical property of GaN films.

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Authors and Affiliations

  1. New Energy Source Research Center, Shenyang Institute of Engineering, Shenyang, 110136, China

    Ju Zhenhe, Zheng Hong, Zhang Dong, Zhao Yan, Wang Gang, Zhang Xiaohui & Li Shuangmei

  2. Liaoning Solar Energy R&D Co., Ltd., 110136, China

    Ju Zhenhe, Li Shi, Zheng Hong, Zhang Dong & Zhao Yan

  3. Department of Physics, Shenyang Institute of Engineering, Shenyang, 110136, China

    Li Yucai

  4. Mathematical Department of Shenyang Medical College, Shenyang, 110136, China

    Miao Lihua

  5. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China

    Qin Fuwen

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  1. Ju Zhenhe
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  2. Li Shi
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Editor information

Editors and Affiliations

  1. Department of Systems Engineering, Naval Post-graduate School in Monterey, California, USA

    Fernand Marquis (Research professor) (Research professor)

  2. Wayne E. Meyer Institute of Systems Engineering, Naval Post-graduate School in Monterey, California, USA

    Fernand Marquis (Research professor) (Research professor)

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© 2013 TMS (The Minerals, Metals & Materials Society)

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Zhenhe, J. et al. (2013). Structural and Electrical Properties of High C-Orientation Gan Films on Diamond Substrates with ECR-PEMOCVD. In: Marquis, F. (eds) Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-48764-9_261

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