Abstract
A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO3−δ and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 104 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO3−δ/Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.
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Wen, J., Guo, H., Xing, J. et al. High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3−δ/Si heterojunction. Sci. China Phys. Mech. Astron. 53, 2080–2083 (2010). https://doi.org/10.1007/s11433-010-4141-8
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DOI: https://doi.org/10.1007/s11433-010-4141-8