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High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure

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Abstract

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when V DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Fang Yang, Meng He, Juan Wen, KuiJuan Jin, HuiBin Lu & GuoZhen Yang

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  1. Fang Yang
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  2. Meng He
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  3. Juan Wen
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  4. KuiJuan Jin
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  5. HuiBin Lu
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  6. GuoZhen Yang
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Corresponding author

Correspondence to HuiBin Lu.

Additional information

Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program of China (Grant No. 2004CB619004)

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Yang, F., He, M., Wen, J. et al. High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure. Sci. China Ser. G-Phys. Mech. Astron. 52, 1299–1301 (2009). https://doi.org/10.1007/s11433-009-0178-y

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  • DOI: https://doi.org/10.1007/s11433-009-0178-y

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