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Replication of large area nanoimprint stamp with small critical dimension loss

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Abstract

In this paper, the replication process of large area nanoimprint stamp with small critical dimension (CD) loss was investigated, using the thin residual layer nanoimprint lithography (NIL) technology. The residual layer thickness was optimized by changing the spin-coated resist thickness. The dependences of the residual layer etching rate on gas flow, chamber pressure, and RF power were investigated, and the optimized process conditions were established. By means of the thin residual layer NIL technique and optimized residual layer etching process, large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer. The CD loss was controlled within 5 nm. The replicated stamp showed high performance in the patterning with thermal NIL. The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss.

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Authors and Affiliations

  1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, China

    FanTao Meng, Le Guan, ZhiWen Wang, ZhiTao Han & JinKui Chu

  2. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China

    FanTao Meng, Le Guan, ZhiWen Wang, ZhiTao Han & JinKui Chu

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  1. FanTao Meng
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  2. Le Guan
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  3. ZhiWen Wang
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  4. ZhiTao Han
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  5. JinKui Chu
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Correspondence to JinKui Chu.

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Meng, F., Guan, L., Wang, Z. et al. Replication of large area nanoimprint stamp with small critical dimension loss. Sci. China Technol. Sci. 55, 600–605 (2012). https://doi.org/10.1007/s11431-011-4695-3

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  • DOI: https://doi.org/10.1007/s11431-011-4695-3

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