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Influence of Scanning Rotation on Nanoscale Artificial Strain in Open-Loop Atomic Force Microscopy

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Abstract

For nanoscale metrology using atomic force microscopy (AFM), it is essential to know the baseline error induced by the AFM scanning process. A systematic study has been performed using digital image correlation (DIC) to quantify the influence of scanning rotation angle on the artificial strain (error) in an open loop AFM. It is found that significant artificial strain has been induced by the scanning rotation angle, demonstrating that highly accurate metrology can only be performed in an open loop AFM when the scan angle is held constant during imaging.

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Acknowledgements

This work was supported by the National Science Foundation (CMMI-0653651, CMMI-0968843, and CMMI-824728) and the University of South Carolina NanoCenter.

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Authors and Affiliations

  1. Department of Mechanical Engineering, University of South Carolina, 300 Main Street, Columbia, SC, 29208, USA

    Zhi-Hui Xu, Michael A. Sutton (SEM Fellow) & Xiaodong Li

  2. Mechanics of Materials, MS 9409, Sandia National Laboratories, Livermore, CA, 94550, USA

    Helena Jin (SEM member) & Wei-Yang Lu (SEM member)

Authors
  1. Zhi-Hui Xu
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  2. Helena Jin
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  3. Wei-Yang Lu
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  4. Michael A. Sutton
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  5. Xiaodong Li
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Correspondence to Xiaodong Li.

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Xu, ZH., Jin, H., Lu, WY. et al. Influence of Scanning Rotation on Nanoscale Artificial Strain in Open-Loop Atomic Force Microscopy. Exp Mech 51, 619–624 (2011). https://doi.org/10.1007/s11340-010-9442-3

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  • DOI: https://doi.org/10.1007/s11340-010-9442-3

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