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Material removal mechanism of precision grinding of soft-brittle CdZnTe wafers

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Abstract

Cd0.96Zn0.04Te (111) wafers were precisely ground by #800, #1500, #3000, and #5000 diamond grinding wheel. For comparison, Cd0.96Zn0.04Te (110) wafers were machined by lapping, mechanical polishing, and chemical mechanical polishing. High-resolution environmental scanning electron microscopy equipped with energy dispersive spectroscopy and optical interference surface profiler both were employed to investigate the surface quality and material removal mechanism. The results show that the material removal mechanism of #800 grinding wheel is abrasive wear, fatigue wear, and adhesive wear, and that of #1500 is abrasive wear and fatigue wear. Both the material removal mechanism of #3000 and #5000 grinding wheel are abrasive wear, leading to the excellent ductile removal precision grinding. While the material removal mechanism of CMP on CdZnTe wafers is firstly chemical resolving reaction and secondly mechanical carrying action. Moreover, precision grinding exhibits high-efficiency character and eliminates the imbedding of free abrasives of Al2O3 and SiO2.

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References

  1. Tani Y, Okuyama T, Murai S, Kamimura Y, Sato H (2007) Development of silica polyvinyl alcohol wheels for wet mirror grinding of silicon wafer. Ann CIRP 56(1):361–364. doi:10.1016/j.cirp. 2007.05.083

    Article  Google Scholar 

  2. Chakrabarti S, Paul S (2008) Numerical modelling of surface topography in superabrasive grinding. Int J Adv Manuf Technol 39(1–2):29–38. doi:10.1007/s00170-007-1201-y

    Article  Google Scholar 

  3. Salonitis K, Chondros T, Chryssolouris G (2008) Grinding wheel effect in the grind-hardening process. Int J Adv Manuf Technol 38(1–2):48–58. doi:10.1007/s00170-007-1078-9

    Article  Google Scholar 

  4. Aurich JC, Herzenstiel P, Sudermann H, Magg T (2008) High-performance dry grinding using a grinding wheel with a defined grain pattern. Ann CIRP 57(1):357–362. doi:10.1016/j.cirp. 2008.03.093

    Article  Google Scholar 

  5. Webster J, Tricard M (2004) Innovations in abrasive products for precision grinding. Ann CIRP 53(2):597–617. doi:10.1016/S0007-8506(07) 60031-6

    Article  Google Scholar 

  6. Liu Q, Chen X, Gindy N (2008) Robust design and optimisation of aerospace alloy grinding by different abrasive wheels. Int J Adv Manuf Technol 39(11–12):1125–1135

    Article  Google Scholar 

  7. Zhang YH, Wu Q, Hu DJ (2008) Research on wear detection of wheel in precision NC curve point grinding. Int J Adv Manuf Technol 35(9–10):994–999

    Article  Google Scholar 

  8. Xu XP, Yu YQ (2002) Adhesion at abrasive-Ti6Al4V interface with elevated grinding temperatures. Int J Adv Manuf Technol 21(16):1293–1295

    Google Scholar 

  9. Mark A, Julie SL, Paul NL (2002) Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe. J Appl Phys 92(6):3198–3206

    Article  Google Scholar 

  10. Prokesch M, Szeles C (2006) Accurate measurement of electrical bulk resistivity and surface leakage of CdZnTe radiation detector crystals. J Appl Phys 100(1):014503

    Article  Google Scholar 

  11. Tsen GKO, Sewell RH, Atanacio AJ, Prince KE, Musca CA, Dell JM, Faraone L (2008) Incorporation and activation of arsenic in MBE-grown HgCdTe. Semicond Sci Technol 23(1):015014

    Article  Google Scholar 

  12. WangCZ WXJ, Zhao J, Chang Y, Grein CH, Sivananthan S, Smith DJ (2007) Microstructure of interfacial HgTe/CdTe superlattice layers for growth of HgCdTe on CdZnTe (211) B substrates. J Cryst Growth 309(2):153–157

    Article  Google Scholar 

  13. Zhang ZY, Gao H, Jie WQ, Guo DM, Kang RK, Li Y (2008) Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals. Semicond Sci Technol 23(10):105023

    Article  Google Scholar 

  14. Peterson KE (1982) Silicon as a mechanical material. Proc IEEE 70(5):420–475

    Article  Google Scholar 

  15. ShoreyAB KKM, Johnson KM, Jacobs SD (2000) Nanoindentation hardness of particles used in magnetorheological finishing. Appl Opt 39(28):5194–5204

    Article  Google Scholar 

  16. KomanduriR UN, Kirtane T, Gerlick R, Jain VK (2006) A new apparatus for finishing large size/large batch silicon nitride(Si3N4) balls for hybrid bearing applications by magnetic float polishing (MFP). Int J Mach Tools Manuf 46(2):151–169

    Article  Google Scholar 

  17. Cheng HB, Feng ZJ, Wang YW, Lei ST (2005) Magnetorheological finishing of SiC aspheric mirrors. Mater Manuf Process 20(6):917–931

    Article  Google Scholar 

  18. Ng D, Liang H (2008) Comparison of interfacial forces during post-chemical-mechanical-polishing cleaning. J Tribol Trans ASME 130(2):021603

    Article  Google Scholar 

  19. Zhang ZY, Guo DM, Kang RK, Gao H, Li Y (2008) Chemical mechanical polishing research of CdZnTe functional crystalline with soft brittle nature. Chin J Mech Eng 44(12):215–220 in Chinese

    Article  Google Scholar 

  20. Zha GQ, Jie WQ, Li Q, Liu YQ (2006) Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer. J Funct Mater 37(1):120–122 in Chinese

    Google Scholar 

  21. Zeng DM, Jie WQ, Zha GQ, Wang T, Yang G (2007) Effect of annealing on the residual stress and strain distribution in CdZnTe wafers. J Cryst Growth 305(1):50–54

    Article  Google Scholar 

  22. Moravec P, Hoschl P, Franc J, Belas E, Fesh R, Grill R, Horodysky P, Praus P (2006) Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method. J Electron Mater 35(6):1206–1213

    Article  Google Scholar 

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Authors and Affiliations

  1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, China

    Zhenyu Zhang, Yaowu Meng & Dongming Guo

  2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China

    Zhenyu Zhang, Lailei Wu, Yongjun Tian & Riping Liu

  3. State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

    Zhenyu Zhang

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  1. Zhenyu Zhang
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  2. Yaowu Meng
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  4. Lailei Wu
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Correspondence to Zhenyu Zhang.

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Zhang, Z., Meng, Y., Guo, D. et al. Material removal mechanism of precision grinding of soft-brittle CdZnTe wafers. Int J Adv Manuf Technol 46, 563–569 (2010). https://doi.org/10.1007/s00170-009-2114-8

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  • DOI: https://doi.org/10.1007/s00170-009-2114-8

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