Abstract
This work presents a theoretical analysis of direct transition in strain balanced SiGeSn/GeSn quantum well infrared photodetector. Eigen energies for Г valley conduction band, heavy hole band and light hole band are obtained from the self consistent solution of coupled Schrödinger and Poisson equations by finite difference method. Absorption spectra for direct transition of heavy hole and light hole band to Г valley are calculated after evaluating Eigen energies and wave functions. Significant absorption in infrared region is obtained for heavy hole band–Г valley conduction band transition. A significant shift in absorption peak towards longer wavelengths is observed in presence of electric field considering excitonic effect.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Bhattacharya, P.: Semiconductor Optoelectronic Devices, 2nd edn. Pearson Education Inc., New Jersey (1994)
Chang, G.-E., Chang, S.-W., Chuang, S.-L.: Strain-balanced GezSn1−z-SixGey Sn1−x−y multiple-quantum-well lasers. IEEE JQE 46, 1813–1820 (2010)
Chuang, S.L.: Physics of Optoelectronic Devices. Wiley, New York (1995)
Crowder, J.G., Smith, S.D., Vass, A., Keddie, J.: Infrared methods for gas detection. Mid infrared semiconductor optoelectronics. Springer Ser. Opt. Sci. 118, 595–613 (2006)
D’costa, V.R., Fang, Y., Mathews, J., Roucka, R., Tolle, J., Menéndez, J., Kouvetakis, J.: Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L telecommunication bands. Semicond. Sci. Technol. (2009). doi:10.1088/0268-1242/24/11/115006
Das, M.K., Pareek, P.: Theoretical analysis of direct transition in SiGeSn/GeSn strain balanced. In: Proceedings of 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2015), ThPd5, pp. 11–12 (postdeadline papers section), 7th–11th September, Taipei (2015)
Datta, S.: Quantum Transport: Atom to Transistor. Cambridge University Press, New York (2005)
Daukes Ekin, N.J., Kawaguchi, K., Zhang, J.: Strain-balanced criteria for multiple quantum well structures and its signature in x-ray rocking curves. Cryst. Growth Des. 2(4), 287–292 (2002)
El Kurdi, M., Kociniewski, T., Ngo, T.-P., Boulmer, J., Débarre, D., Boucaud, P., Damlencourt, J.F., Kermarrec, O., Bensahel, D.: Enhanced photoluminescence of heavily n-doped germanium. APL 94, 191107-1–191107-3 (2009)
Fischetti, M.V., Laux, S.E.: Band structure, deformation potentials and carrier mobility in strained Si, Ge, and SiGe alloys. JAP 80, 2234–2252 (1996)
Gassenq, A., Gencarelli, F., Van Campenhout, J., Shimura, Y., Loo, R., Narcy, G., Vincent, B., Roelkens, G.: GeSn/Ge heterostructure short-wave infrared photodetectors on silicon. Opt. Express 20, 27297–27303 (2012)
Goodman, C.H.L.: Direct-gap group IV semiconductors based on tin. IEEE Proc. I Solid State Electron Devices 129, 189–192 (1982)
Kouvetakis, J., Menedez, J., Chizmeshya, A.V.G.: Tin based group IV semiconductors: new platforms for opto and micro electronics and silicon. Annu. Rev. Mat. Res. 36, 497–554 (2006)
Lever, L., Ikonić, Z., Valavanis, A., Kelsall, R.W., Myronov, M., Leadley, D.R., Hu, Y., Owens, N., Gardes, F.Y., Reed, G.T.: Optical absorption in highly strained Ge/SiGe quantum wells: the role of Γ → Δ scattering. JAP 112(12), 123105-1–123105-7 (2012)
Miller, D.A.B., Chemla, D.S., Damen, T.C., Gossard, A.C., Wiegman, W., Wood, T.H., Burrus, C.A.: Electric field dependence of optical absorption near the band gap of quantum-well structures. Phy. Rev. B 32(2), 1043–1060 (1985)
Roelkens, G., et al.: Silicon-based photonic integration beyond the telecommunication wavelength range. IEEE JSQE. (2014). doi:10.1109/JSTQE.2013.2294460
Singh, J.: Electronic and Optical Properties of Semiconductor Structures. Cambridge University Press, New York (2005)
Soref, R.A.: The past, present, and future of silicon photonics. IEEE JSQE 12, 1678–1687 (2006)
Soref, R.A., Perry, C.H.: Predicted bandgap of the new semiconductor SiGeSn. JAP 69, 539–541 (1991)
Stern, F.: Iteration methods for calculating self-consistent fields in semiconductor inversion layers. J. Comput. Phys. 6, 56–67 (1970)
Tan, I.H., Snider, G.L., Chang, L.D., Hu, E.L.: A self-consistent solution of Schrödinger–Poisson equations using a nonuniform mesh. JAP 68, 4071–4076 (1990)
Van de Walle, C.G.: Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B 39, 1871–1883 (1989)
Yahyaoui, N., Sfina, N., Lazzari, J.-L., Bournel, A., Said, M.: Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection. Phys. Status Solidi C 11(11–12), 1561–1565 (2014)
Yahyaoui, N., Sfina, N., Lazzari, J.-L., Bournel, A., Said, M.: Stark shift of the absorption spectra in Ge/Ge1xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators. Superlattices Microstruct 85, 629–637 (2015)
Acknowledgments
This work is partly supported by UGC, Govt. of India through the SAP project grant for the Department of Electronics Engineering in the thrust area, Modeling of Semiconductor Nanostructured Devices.
Author information
Authors and Affiliations
Corresponding author
Additional information
This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 15.
Guest edited by Julien Javaloyes, Weida Hu, Slawek Sujecki and Yuh-Renn Wu.
Rights and permissions
About this article
Cite this article
Pareek, P., Das, M.K. Theoretical analysis of direct transition in SiGeSn/GeSn strain balanced QWIP. Opt Quant Electron 48, 228 (2016). https://doi.org/10.1007/s11082-016-0498-x
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-016-0498-x