Abstract
This paper aims to provide the performance characteristics of proposed, strain balanced direct band gap multiple quantum wells (MQWs) hetero phototransistor (HPT) made of SiGeSn/GeSn alloys grown on Si substrate which is compatible with recent CMOS fabrication technology. This also presents a comprehensive comparison of this proposed structure with the existing HPT structure made of indirect gap Ge/SiGe MQWs. Alloys of Ge and Sn grown on Si platform shows about tenfold increase in absorption over Ge at C and L-bands due to direct nature of band gap in GeSn. Initial work begins the solution of continuity equation to solve the different terminal current densities and optical gain of the multiple quantum well structure. Main analysis was concentrated on finding the external quantum efficiency depending on the doping variations of emitter and base, base width etc. Finally the photocurrent density variations are estimated for the structure and compared with existing indirect band gap HPT. The calculated values for direct band gap GeSn HPT device are found to be comparable with those for indirect band gap SiGe device to flourish as a potential candidate of photo detectors for the present day telecommunication network.
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Acknowledgements
The first author (VC) acknowledges supports from the UGC, New Delhi, India sponsored Project Fellowship under its RFSMS scheme and B.P. Poddar Institute of Management and Technology (ECE Dept). The second author (SD) acknowledges supports from the TEQUIP scheme.
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Chakraborty, V., Dey, S., Basu, R. et al. Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor. Opt Quant Electron 49, 125 (2017). https://doi.org/10.1007/s11082-017-0947-1
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DOI: https://doi.org/10.1007/s11082-017-0947-1