Abstract
We report on 2D simulations of dark current for InP/In0.53Ga0.47aAs/InP p-i-n photodiode. Our simulation result is in good agreement with experiment confirming that generation-recombination effect is the dominant source of the dark current at low bias. Effects of the thickness and doping concentration of the absorption layer on the dark current are discussed in detail.
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Wang, X.D., Hu, W.D., Chen, X.S. et al. Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode. Opt Quant Electron 40, 1261–1266 (2008). https://doi.org/10.1007/s11082-009-9279-0
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DOI: https://doi.org/10.1007/s11082-009-9279-0