Abstract
Gain calculation of Si1-yGe y n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. Carrier diffusion from undepleted regions is considered to study the effect of low bias. The computed results are used to investigate the effect of Ge-composition (y) on the gain of a Si1-yGe y APD having thin multiplication layer. Results show that gain increases with bias more rapidly with the increase in Ge-content. It is also seen that thinner multiplication layer is required for APD having lower Ge-content to achieve the same gain at a given bias.
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Acknowledgments
Author, K. Majumder thankfully acknowledges the financial support from the Department of Science and Technology (DST) of the Government of India [No. SR/S2/CMP-0110/2010(G)]. Authors would also like to thank the colleagues in their research group in the Institute of Radio Physics & Electronics of the University of Calcutta, India for their help and comments.
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Majumder, K., Das, N.R. (2014). Effect of Ge-composition on the Gain of a Thin Layer Si1-yGe y Avalanche Photodiode. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_54
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DOI: https://doi.org/10.1007/978-3-319-03002-9_54
Publisher Name: Springer, Cham
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