Abstract
1,10-Phenanthroline (Phen) as a new additive was added into the solutions of KH2PO4 (KDP) and NH4H2PO4 (ADP) in a small amount (∼2.5·10−3 M L−1). The crystals were grown from the aqueous solutions of pH ∼4.5 at constant temperature by solvent evaporation technique. It leads to an increase in metastable zone width and assists the bulk growth process. The growth rate of crystals in the presence of Phen decreases considerably with an increase in impurity concentration (∼2.5·10−2 M L−1). Not much variation is observed in FTIR and XRD of pure and doped ADP/KDP. It appears that the growth promoting effect (GPE) of Phen is caused by the adsorption of the organic additive on the prism faces of ADP/KDP crystals. Higher optical transmittance is observed in the presence of the dopant. Detailed microhardness studies of ADP crystals reveal the anisotropy in the hardness behaviour. Scanning electron microscope (SEM) photographs exhibit the effectiveness of the impurity in changing the surface morphology of ADP/KDP crystals. Contrary to expectations, Phen depresses the NLO efficiency of ADP/KDP, suggesting that the molecular alignments in the presence of Phen results in cancellation effects disturbing the non-linearity.
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Meenakshisundaram, S.P., Parthiban, S., Madhurambal, G. et al. Effect of complexing agent (1,10-phenanthroline) on ADP and KDP crystals. J Therm Anal Calorim 94, 15–20 (2008). https://doi.org/10.1007/s10973-008-9181-1
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DOI: https://doi.org/10.1007/s10973-008-9181-1