Abstract
Homogeneous and transparent ZrO2 thin films were prepared by sol–gel dip coating method. The prepared ZrO2 thin films were annealed in air and O2 atmosphere at 500, 700 and 900 °C for 1, 5 and 10 h. X-Ray diffraction (XRD) pattern showed the formation of tetragonal phase with a change of stress in the films. Scanning electron microscope (SEM) revealed the nucleation and particle growth on the films. An average transmittance of >80 % (in UV–Vis region) was observed for all samples. The refractive index and direct energy band gap were found to vary as functions of annealing atmosphere, temperature and time. Photoluminescence (PL) revealed an intense emission peak at 379 nm weak emission peaks at 294, 586 and 754 nm. An enhancement of PL intensity was observed in films annealed in O2 atmosphere. This is due to reconstruction of zirconium nanocrystals interfaces, which help passivate the non-radiative defects. At 900 °C, oxygen atoms react with Zr easily at the interface and destroy the interface states acting as emission centres and quench the PL intensity of the film. The enhancement of the luminescence properties of ZrO2 by the passivation of non radiative defects presents in the films make it suitable for gas sensors development, tuneable lasers and compact disc (CD) read-heads.
Similar content being viewed by others
References
Venataraj S, Kappertz O, Weis H, Drese R, Jayavel R, Wuttig M (2002) J Appl Phys 92:3599
Lai L-J, Lu H-C, Chen H-K, Cheng B-M, Lin M-I, Chu T-C (2005) J Electron Spectrosc Relat Phenom 865:144
Gottmann J, Husmann A, Klotzbucher T, Kreutz EW (1998) Surf Coat Technol 100–101:415
Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P (2001) Science 292:1897
Cao H, Qiu X, Luo B, Liang Y, Zhang Y, Tan R, Zhao M, Zhu Q (2004) Adv Funct Mater 14(3):243
Joy K, John Berlin I, Nair PB, Lakshmi JS, Daniel GP, Thomas PV (2011) J Phys Chem Solids 72:673
Kim H, Horwize JS, Qadri SB, Chrisey DB (2002) Thin Solid Films 10:420
Suzuki A, Matsushita T, Wada N, Sakamoto Y, Okuda M (1996) Jpn J Appl Phys 35:L36
Lakshmi JS, John Berlin I, Daniel GP, Thomas PV, Joy K (2011) Phys B 406:3050L56
Fabris S, Paxton AT, Finnis MW (2002) Acta Mater 50:5171
Kirm M, Aarik J, Jurgens M, Sildos I (2005) Nucl Instrum Methods Phys Res A 537:251
Peyser LA, Vinson AE, Bartko AP, Dickson RM (2001) Science 29:103
Smits K, Grigorjeva L, Millers D, Sarakovskis A, Grabis J, Lojkowski W (2011) J Lumin 131:2058
Smits K, Millers D, Grigorjeva L, Fidelus J, Lojkowski D (2007) J Phys: Conf Ser 93:012035
Ito T, Maeda M, Nakmura K, Kato H, Ohki Y (2005) J Appl Phys 97:54104
Harrison DE, Melamed NT, Subbarao EC (1963) J Electrochem Soc 110:23
Hsieh WC, Su CS (1994) J Phys D Appl Phys 27:1763
Paje SE, Garcia MA, Liopis J (1995) Phys Stat Sol (a) 148:225
Liang J, Jiang X, Liu G, Deng Z, Zhuang J, Li F, Li Y (2003) Mater Res Bull 38:161
Trivinho-Strixino F, Guimarães FEG, Pereira EC (2008) Chem Phys Lett 461:82
Cullity BD, Stock SR (2001) Elements of X-ray diffraction, 3rd edn. Prentice Hall, Upper Saddle River, NJ, p 388
John Berlin I, Lakshmi JS, Sujatha Lekshmy S, Daniel GP, Thomas PV, Joy K (2011) J Sol-Gel Sci Technol 58:669
Kohl D, Henzler M, Heiland G (1974) Surf Sci 41:403
Thompson CV (2000) Annu Rev Mater Sci 30:159
Grunze M, Hirschwald W, Hofmann D (1981) J Cryst Growth 52:24
Cassir M, Goubin F, Bernay C, Vernoux P, Lincot D (2002) Appl Surf Sci 193:120
Buschow KHJ, Cahn RW, Flemings MC, Kramer EJ, Mahajan S, Veyssière P (2001) Amorphous semiconductors localization. In: The encyclopedia of materials: science and technology. Elsevier Science Ltd., New York, pp 277–283
Bin WU, Chen CY, Zhang S, Wang W, Liao K (1998) J Mater Sci Technol 14(2):161
Gao Y, Masuda Y, Ohta H, Koumoto K (2004) Chem Mater 16:2615
French RH, Glass SJ, Ohuchi FS, Xu YN, Ching WY (1994) Phys Rev B 49:5133
Liang J, Deng Z, Jiang X, Li F, Li Y (2002) Inorg Chem 41:3602
Lucoysky G, Hinlke CL, Fulton CC, Stoute NA, Seo H, Luning J (2006) Radiat Phys Chem 75:2097
Liopis J (1990) Phys Status Sol A 119:661
Arsenev PA, Bagdasarov KhS, Niklas A, Rhyazantsev AD (1980) Phys Status Sol A 62:395
Kumar CSSR (2006) Nanomaterials—Toxicity, Health and Environmental Issues. Wiley-VCH, Weinhem
Lopez M, Garrido B, Garcia C, Pellegrino P, Perez-Rodriguez A, Morante JR (2002) Appl Phys Lett 80:1637
Wilkinson AR, Elliman RG (2004) J Appl Phys 96:4018
Joy K, Maneeshya LV, Thomas JK, Thomas PV (2012) Thin Solid Films 520:2683
Acknowledgments
The authors are grateful for the financial assistance of KSCSTE, Govt. of Kerala, India, Major Research Project (2009–2012).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Berlin, I.J., Anitha, V.S., Thomas, P.V. et al. Influence of oxygen atmosphere on the photoluminescence properties of sol–gel derived ZrO2 thin films. J Sol-Gel Sci Technol 64, 289–296 (2012). https://doi.org/10.1007/s10971-012-2856-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10971-012-2856-x