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Investigation of sensing properties of sol–gel processed 4 at%Sb:SnO2/TiO2 thin films

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Abstract

In this work we investigate the gas and photo sensing properties of the antimony doped tin oxide and titanium oxide (4 at%Sb:SnO2/TiO2) nanocrystalline thin films deposited by sol–gel dip-coating. Photoconductivity measurements are carried out under solar light spectra irradiation at different powers. These results show a photo sensitivity of the films in a lateral junction due to interfacial defects. Gas sensitivity was studied at different pressures, and higher conductivity is presented at lower pressure compared to oxygen-rich atmosphere. It occurs due to absence of oxygen adsorption on the semiconductors surface. TiO2 films are also investigated concerning its properties to gas sensing under photo-excitation with InGaN LED light source with wavelength centered in 450 nm. The decay of photo-induced current evaluated under O2 and vacuum atmospheres shows that the sample illumination may contribute to higher gas-sensitivity. This measurement allows determining the charge carrier capture energy, that is related to trapping dominated by distinct defects in each atmosphere.

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Acknowledgements

We acknowledge Ana H. C. Maciel for her participation in the current–voltage under solar light spectra photoexcitation, Prof. Dr P.N. Lisboa and MSc L.D. Trino for help with TiO2 solution processing. We also would like to thank Prof. Dr C.F.O. Graeff and L.G.S. Albano for solar light simulator and electrical measurement-software interface. This work was financially supported by CAPES, FAPESP (2017/10766-1), AUXE/PROEX (2330/2015), and CNPq (305963/2016-3).

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Authors and Affiliations

  1. POSMAT - Post-Graduate Program in Materials Science and Technology, School of Sciences, São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil

    Miguel H. Boratto, Roberto A. Ramos Jr. & Luis V. A. Scalvi

  2. Department of Physics, School of Sciences, São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil

    Miguel H. Boratto & Luis V. A. Scalvi

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  1. Miguel H. Boratto
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  2. Roberto A. Ramos Jr.
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  3. Luis V. A. Scalvi
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Correspondence to Miguel H. Boratto.

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Boratto, M.H., Ramos, R.A. & Scalvi, L.V.A. Investigation of sensing properties of sol–gel processed 4 at%Sb:SnO2/TiO2 thin films. J Mater Sci: Mater Electron 29, 467–473 (2018). https://doi.org/10.1007/s10854-017-7935-x

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  • DOI: https://doi.org/10.1007/s10854-017-7935-x

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