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Preparation of CuSbS2 thin films by a facile and low-cost chemical solution method

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Abstract

In this paper, CuSbS2 thin films were prepared by a facile and environmental-friendly chemical solution method at low temperature. The effect of sulfurization temperature was studied. The properties of CuSbS2 thin films were investigated by X-ray diffraction, scanning electron microscopy, UV–Vis and photocurrent response measurement. The results indicated CuSbS2 thin films sulfurized at 350 °C showed better crystallinity and no impurity phase. The as-prepared CuSbS2 film had a band gap of 1.5 eV and an obvious photoconductivity.

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Acknowledgements

This work has been financially supported by Doctor Start-up Fund Research supported by Jinling Institute of Technology (jit-b-201612), Innovation Fund for Scientific Research supported by JIT (jit-fhxm-201609), the Opening Project of Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology (ASMA201603).

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Authors and Affiliations

  1. School of Materials Engineering, Jinling Institute of Technology, 99 Hongjing Avenue, Nanjing, 211169, China

    Wei Wang, Lingyun Hao, Wei Zhang, Qing Lin, Xiaojuan Zhang & Zhengxia Tang

  2. Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, 1 Hongjing Avenue, Nanjing, 211167, China

    Wei Wang & Lingyun Hao

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  1. Wei Wang
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  2. Lingyun Hao
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  3. Wei Zhang
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  4. Qing Lin
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  5. Xiaojuan Zhang
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  6. Zhengxia Tang
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Correspondence to Lingyun Hao.

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Wang, W., Hao, L., Zhang, W. et al. Preparation of CuSbS2 thin films by a facile and low-cost chemical solution method. J Mater Sci: Mater Electron 29, 4075–4079 (2018). https://doi.org/10.1007/s10854-017-8351-y

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  • DOI: https://doi.org/10.1007/s10854-017-8351-y

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