Abstract
Thin film NTCR (negative temperature coefficient resistance), based on Mn–Co–Ni oxide, was prepared by reactive RF magnetron sputtering with various sputtering power density (0.95–3.82 W/cm2). The crystalline structure and surface morphology of the NTC thin film were analyzed by XRD and AFM. The NTC characteristics, as a function of sputtering power density, were investigated. The values of B, α 25 and R 25 were in the range of 3,740–3,847 K, −4.328 to −4.207 %/K and 8.7–2,082.5 KΩ, respectively. With the increasing power density, the standard resistance (R 25 ) decreased and the consistency of R25 increased. Thin film NTCR with stable B value (3,740 K), low R 25 (104 Ω) and excellent consistency could be fabricated in mass production with about 3.82 W/cm2 sputtering power density.
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This work is sponsored by the UNISPAR (University-Industry-Science Partnership) of Guangdong province and Education Ministry of China (Grant No. 2009A090100003.).
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Lei, G., Chen, H., Zheng, S. et al. Effects of RF magnetron sputtering power density on NTC characteristics of Mn–Co–Ni thin films. J Mater Sci: Mater Electron 24, 1203–1207 (2013). https://doi.org/10.1007/s10854-012-0906-3
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DOI: https://doi.org/10.1007/s10854-012-0906-3