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Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

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Abstract

A series of hydrogenated microcrystalline films were grown by a novel thin film deposition method using the Saddle Field Plasma Enhanced Chemical Vapour Deposition system. We show that the surface potential during growth strongly affects the microcrystalline character of the films, as quantified by Raman scattering. This effect can be reproduced on both conductive and non-conductive substrates. Films grown close to the threshold for microcrystalline growth exhibit laser-induced crystallization at low laser intensities.

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Acknowledgements

The authors acknowledge the support of the Natural Sciences and Engineering Research Council of Canada, ARISE Technologies, and Materials and Manufacturing Ontario.

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  1. Erik V. Johnson

    Present address: LPICM, École Polytechnique, Palaiseau Cedex, 91128, France

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada

    Erik V. Johnson, Nazir P. Kherani & Stefan Zukotynski

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  1. Erik V. Johnson
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Johnson, E.V., Kherani, N.P. & Zukotynski, S. Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias. J Mater Sci: Mater Electron 17, 801–813 (2006). https://doi.org/10.1007/s10854-006-0026-z

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  • DOI: https://doi.org/10.1007/s10854-006-0026-z

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