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Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

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Abstract

In the present work, the channels of single-walled carbon nanotubes (SWCNTs) were filled with tin sulfide (SnS), gallium telluride (GaTe), and bismuth selenide (Bi2Se3). The successful encapsulation of the compounds was proven by high-resolution transmission electron microscopy. The electronic properties of the filled SWCNTs were studied by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the embedded metal chalcogenides have different influence on the electronic properties of the nanotubes. The incorporation of tin sulfide into the SWCNTs does not result in sufficient changes in the electronic structure of SWCNTs, except for a minor influence on metallic nanotubes. The filling of SWCNTs with gallium telluride causes the charge transfer from the SWCNT walls to the encapsulated compound due to acceptor doping of the nanotubes. The insertion of bismuth selenide inside the SWCNT channels does not lead to the modification of the electronic properties of nanotubes.

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Acknowledgements

SWCNTs were synthesized by Dr. A.V. Krestinin (Institute of Problems of Chemical Physics RAS, Chernogolovka, Russia). M.V. Kharlamova thanks Dr. J.J. Niu (Drexel University, USA) for the HRTEM measurements. The XP spectra were recorded together with Dr. L.V. Yashina within a special course at Department of Materials Science of Lomonosov Moscow State University.

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  1. Department of Materials Science, Lomonosov Moscow State University, Leninskie gory 1-3, 119991, Moscow, Russia

    M. V. Kharlamova

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Kharlamova, M.V. Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes. J Mater Sci 49, 8402–8411 (2014). https://doi.org/10.1007/s10853-014-8550-3

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