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Improved thermoelectric properties of La-doped Bi2Sr2Co2O9-layered misfit oxides

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Abstract

Bi2Sr2−xLaxCo2O9 (x = 0, 0.02, 0.04, and 0.08) polycrystalline-layered misfit oxides have been prepared by solid-state reactions. Electrical property measurements indicated that all the samples are p-type semiconductors. The electrical conductivity decreased and the Seebeck coefficient increased with increasing temperature. The thermal conductivities were very low, only 0.6–0.7 W m−1 K−1 at room temperature. La doping was effective in increasing the Seebeck coefficient, reducing the thermal conductivity, and hence improving the thermoelectric performance. A highest dimensionless figure of merit ZT of 0.147 was obtained for Bi2Sr1.96La0.04Co2O9 sample at 737 K, about two times higher than that of the sample without La doping.

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Acknowledgements

The study was supported by National “973” Program (2007CB607502), the National “863” Hi-tech Program of China (2007AA03Z234), and the Natural Science Foundation of China (50731006 and 50601022).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, No. 38 Zheda Road, Hangzhou, 310027, China

    J. J. Shen, X. X. Liu, T. J. Zhu & X. B. Zhao

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  1. J. J. Shen
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  2. X. X. Liu
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  3. T. J. Zhu
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  4. X. B. Zhao
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Correspondence to T. J. Zhu or X. B. Zhao.

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Shen, J.J., Liu, X.X., Zhu, T.J. et al. Improved thermoelectric properties of La-doped Bi2Sr2Co2O9-layered misfit oxides. J Mater Sci 44, 1889–1893 (2009). https://doi.org/10.1007/s10853-009-3279-0

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  • DOI: https://doi.org/10.1007/s10853-009-3279-0

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