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Optimization of electrical and thermal transport properties of layered Bi2O2Se via Nb doping

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Abstract

Layered oxygen-containing compound Bi2O2Se is a promising n-type thermoelectric material, favored by its considerably high Seebeck coefficient and low thermal conductivity. Significant preferred orientation along plane (110), identified in the hot-pressed sample, results in obvious anisotropy in the electrical and thermal transport properties. Nb substitution Bi in the insulating layer [Bi2O2]2+ can effectively increase the electron concentration (from 1016 to 1018 cm−3) by two orders of magnitude, while maintaining high mobility. Therefore, a larger power factor of 2.19 μW cm−1 K−2 has been obtained for Bi1.94Nb0.06O2Se at 823 K, which enlarges by three times in comparison with pristine Bi2O2Se (0.673 μW cm−1 K−2). Combined with the inherently low thermal conductivity, the ZT values of Bi1.94Nb0.06O2Se reach 0.195 at 823 K, corresponding to 325% enhancement. This study shows that the substitution of Nb for Bi is a promising way to optimize the thermoelectric properties of Bi2O2Se-based thermoelectric materials.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (2018YFA0702100), National Natural Science Foundation of China (21771123), the Program of Introducing Talents of Discipline to Universities (D16002). G.-H. Rao is grateful to the foundation for Guangxi Bagui scholars.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai, 200444, China

    Yuping Li, Haojie Huo, Hai Huang, Kai Guo, Xinxin Yang, Juanjuan Xing & Jun Luo

  2. Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai, 200444, China

    Juanjuan Xing & Jun Luo

  3. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China

    Guang-Hui Rao & Jing-Tai Zhao

  4. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, China

    Guang-Hui Rao & Jing-Tai Zhao

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  1. Yuping Li
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Li, Y., Huo, H., Huang, H. et al. Optimization of electrical and thermal transport properties of layered Bi2O2Se via Nb doping. J Mater Sci 56, 12732–12739 (2021). https://doi.org/10.1007/s10853-021-06089-5

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