Abstract
A new two-dimensional self-consistent Monte-Carlo simulator including the multi sub-band transport in a 2D electron gas is described and applied to an ultra-thin Double Gate MOSFET. This approach takes into account both out of equilibrium transport and quantization effects. This method improves significantly microscopic insight into the operation of deep sub-100 nm CMOS devices. We analyze the ballistic, quantization and roughness effects in a 12 nm-long DGMOS transistor. In particular, we focus on the link between non-stationary transport and the evolution of sub-band occupancy along the channel.
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Saint-Martin, J., Bournel, A., Aubry-Fortuna, V. et al. Monte Carlo simulation of double gate MOSFET including multi sub-band description. J Comput Electron 5, 439–442 (2006). https://doi.org/10.1007/s10825-006-0043-4
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DOI: https://doi.org/10.1007/s10825-006-0043-4