In2S3 thin fi lms are grown on glass substrates by vacuum thermal evaporation followed by annealing in vacuum between 330 and 400 °C for different time durations. We have investigated the infl uence of the annealing parameters on the characteristics of thin fi lms. It is shown that thermal treatment changed the crystal structure and optical energy band gap of In2S3 thin fi lms. Two energy band gaps were determined for all the fi lms, one indirect and the other direct.
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Published in Zhurnal Prikladnoi Spektroskopii, Vol. 81, No. 2, pp. 297–300, March–April, 2014.
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Izadneshan, H., Gremenok, V.F. Influence of Annealing on the Optical Parameters of In2S3 Thin Films Produced by Thermal Evaporation. J Appl Spectrosc 81, 293–296 (2014). https://doi.org/10.1007/s10812-014-9924-7
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DOI: https://doi.org/10.1007/s10812-014-9924-7