Abstract
Based on DPL model, the thermoelastic behavior of a semiconductor material subjected to an initial stress, with temperature dependent properties, is proposed. The normal mode analysis method resorted to for a solution. Numerically simulated results are obtained, and presented graphically for silicon, to depict the effect of initial stress and temperature dependent property parameters on the different physical quantities.
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Othman, M.I.A., Tantawi, R.S. & Eraki, E.E.M. Effect of initial stress on a semiconductor material with temperature dependent properties under DPL model. Microsyst Technol 23, 5587–5598 (2017). https://doi.org/10.1007/s00542-017-3326-8
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DOI: https://doi.org/10.1007/s00542-017-3326-8