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Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

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Abstract

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

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Acknowledgments

This work was supported by the Japan Society for the Promotion of Science under Grants-in-Aid for Scientific Research (A) 23246024.

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Authors and Affiliations

  1. Department of Mechanical Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 4648603, Japan

    Lan Zhang, Yang Ju, Atsushi Hosoi & Akifumi Fujimoto

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  1. Lan Zhang
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  2. Yang Ju
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  3. Atsushi Hosoi
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  4. Akifumi Fujimoto
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Correspondence to Yang Ju.

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Zhang, L., Ju, Y., Hosoi, A. et al. Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. Microsyst Technol 18, 1917–1922 (2012). https://doi.org/10.1007/s00542-012-1512-2

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  • DOI: https://doi.org/10.1007/s00542-012-1512-2

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