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Development of a nanostructural microwave probe based on GaAs

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Abstract

In order to develop a new structural microwave probe, we studied the fabrication of an AFM probe on a GaAs wafer. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe where a tip 7 μm high with a 2.0 aspect ratio was formed and the dimensions of the cantilever were 250 × 30 × 15 μm. The open structure of the waveguide at the tip of the probe was obtained by FIB fabrication. An AFM image and profile analysis for a standard sample, obtained by the fabricated GaAs microwave probe and a commercial Si AFM probe, indicate that the fabricated probe has a similar capability for measurement of material topography as compared to the commercial probe.

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Acknowledgments

This work was supported by the Japan Society for the Promotion of Science under Grant-in-Aid for Scientific Research (S) 18106003 and (A) 17206011; Ministry of Education, Culture, Sports, Science and Technology of Japan under Grant-in-Aid Exploratory Research 18656034.

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Authors and Affiliations

  1. Department of Mechanical Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

    Y. Ju

  2. Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Aoba 6-6-01, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

    T. Kobayashi & H. Soyama

Authors
  1. Y. Ju
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  2. T. Kobayashi
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  3. H. Soyama
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Correspondence to Y. Ju.

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Ju, Y., Kobayashi, T. & Soyama, H. Development of a nanostructural microwave probe based on GaAs. Microsyst Technol 14, 1021–1025 (2008). https://doi.org/10.1007/s00542-007-0484-0

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  • DOI: https://doi.org/10.1007/s00542-007-0484-0

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