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Structural, morphological, optical and electrical properties of Cu0.87Se thin films coated by electron beam evaporation method

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Abstract

Copper selenide powder was synthesized adopting a two-step chemical route. X-ray diffraction analysis showed that the synthesized material consists of mixed phases of Cu3Se2, Cu7Se4 and Cu0.87Se. Synthesized material was used to deposit thin films at the substrate temperature of 200, 300, 400 and 500 °C by electron beam evaporation method. The substrate temperature of 200 °C yielded amorphous film, whereas the substrate temperature of 300, 400 and 500 °C produced Cu0.87Se single-phase thin film. Atomic force microscopic studies showed that the film coated at 400 °C possesses relatively lower average roughness. The direct band gap of Cu0.87Se varies from 1.67 to 1.81 eV. Thin film coated at 400 °C shows the minimum resistivity of 5.2 × 10−4 Ω cm, whereas the film coated at 300 °C possesses the maximum mobility of 8.2 cm2/Vs.

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Acknowledgments

P. V. B. thanks the UGC, India, for the award of a Research Fellowship in Sciences for Meritorious Students [FILE NO. 4–1/2010 (BSR)].

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Authors and Affiliations

  1. Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli, 620024, Tamil Nadu, India

    P. V. Bhuvaneswari & R. Ramesh Babu

  2. Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, Sri Ramaswamy Memorial University, Kattankulathur, 603203, Tamil Nadu, India

    K. Ramamurthi

  3. Crystal Growth Centre, Anna University, Chennai, 600025, Tamil Nadu, India

    S. Moorthy Babu

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  1. P. V. Bhuvaneswari
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  2. K. Ramamurthi
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Correspondence to K. Ramamurthi.

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Bhuvaneswari, P.V., Ramamurthi, K., Ramesh Babu, R. et al. Structural, morphological, optical and electrical properties of Cu0.87Se thin films coated by electron beam evaporation method. Appl. Phys. A 120, 1113–1120 (2015). https://doi.org/10.1007/s00339-015-9286-x

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