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Effect of selenization temperature on the crystalline and electrical properties of Cu2SnSe3 thin films obtained from rapid thermal process

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Abstract

In this paper, effect of selenization temperature on the crystalline and electrical properties of Cu2SnSe3 (CTSe) thin films obtained from rapid thermal processing (RTP) has been studied. X-ray diffraction and scanning electron microscope results indicated that the crystallinity of CTSe thin film is improved with the increase of selenization temperature. X-ray diffraction and Raman analysis revealed that the CTSe thin films without secondary phase were obtained at a growth temperature above 600 °C. A decrease of the element Tin (Sn) in the RTP process is observed as substrate temperature is increased from 550 to 700 °C. The band gap the CTSe thin films is between 0.87 and 0.91 eV distinguished by the selenization temperature. The CTSe thin films showed p-type conductivity with carrier concentrations of 1017–1021 cm−3. Hole mobility of the CTSe thin films were found to range between 4.48 and 23.6 cm2 V−1 s−1. Electrical properties improved significantly because of the RTP temperature increased.

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Acknowledgments

This work was supported by National Basic Research Program of China (973 Program)-2012CB922001.

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Authors and Affiliations

  1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China

    Tuteng Ma, Chenchen Yuan, Guoshun Jiang, Weifeng Liu & Changfei Zhu

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  1. Tuteng Ma
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  2. Chenchen Yuan
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  3. Guoshun Jiang
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  4. Weifeng Liu
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  5. Changfei Zhu
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Correspondence to Weifeng Liu or Changfei Zhu.

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Ma, T., Yuan, C., Jiang, G. et al. Effect of selenization temperature on the crystalline and electrical properties of Cu2SnSe3 thin films obtained from rapid thermal process. J Mater Sci: Mater Electron 26, 8760–8764 (2015). https://doi.org/10.1007/s10854-015-3554-6

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  • DOI: https://doi.org/10.1007/s10854-015-3554-6

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