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Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

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Abstract

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 °C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 °C, indicating its potential application in the advanced barrierless Cu metallization.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 11075112), the Shenzhen Industry Development Fund Project (Project No. CXZZ20130322162305933) and the Shenzhen Engineering Laboratory Project (No. 2012-1127).

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Authors and Affiliations

  1. Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen, 518055, People’s Republic of China

    Guohua Jiao

  2. The Chinese University of Hong Kong, Shatin, Hong Kong, 999077, People’s Republic of China

    Guohua Jiao

  3. Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, People’s Republic of China

    Bo Liu

  4. Institut d’Electronique Fondamentale, CNRS-Université Paris Sud UMR 8622, 91405, Orsay, France

    Qiran Li

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  1. Guohua Jiao
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  2. Bo Liu
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  3. Qiran Li
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Correspondence to Bo Liu.

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Jiao, G., Liu, B. & Li, Q. Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration. Appl. Phys. A 120, 579–585 (2015). https://doi.org/10.1007/s00339-015-9219-8

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  • DOI: https://doi.org/10.1007/s00339-015-9219-8

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