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Platinum–aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory

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Abstract

Platinum–aluminum (Pt–Al) alloy top electrode on the retention improvement of gadolinium oxide (Gd x O y ) resistive switching memory was investigated. The aluminum oxide (Al x O y ) formation at the Pt–Al alloy top electrode and Gd x O y interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the Gd x O y resistive switching memory.

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Acknowledgements

This work was supported by the National Science Council, R.O.C. under the contract No. of NSC101-2221-E-182-053.

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Correspondence to Jer-Chyi Wang.

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Wang, JC., Jian, DY., Ye, YR. et al. Platinum–aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory. Appl. Phys. A 113, 37–40 (2013). https://doi.org/10.1007/s00339-013-7874-1

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  • DOI: https://doi.org/10.1007/s00339-013-7874-1

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