Abstract
Platinum–aluminum (Pt–Al) alloy top electrode on the retention improvement of gadolinium oxide (Gd x O y ) resistive switching memory was investigated. The aluminum oxide (Al x O y ) formation at the Pt–Al alloy top electrode and Gd x O y interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the Gd x O y resistive switching memory.
References
K. Nagahara, T. Mukai, N. Ishiwata, H. Hada, S. Tahara, Jpn. J. Appl. Phys. 42, L499 (2003)
M. Alexe, C. Harnagea, W. Erfurth, D. Hesse, U. Gösele, Appl. Phys. A 70, 247 (2000)
Y.F. Lai, J. Feng, B.W. Qiao, Y.F. Cai, Y.Y. Lin, T.A. Tang, B.C. Cai, B. Chen, Appl. Phys. A 84, 21 (2006)
L. Liu, B. Chen, B. Gao, F. Zhang, Y. Chen, X. Liu, Y. Wang, R. Han, J. Kang, Appl. Phys. A 102, 991 (2011)
R. Waser, M. Aono, Nat. Mater. 6, 833 (2007)
K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Jizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, Y. Sugiyama, in IEDM Tech. Dig. (2007), p. 767
S.G. Hu, Y. Liu, T.P. Chen, Z. Liu, Q. Yu, L.J. Deng, Y. Yin, S. Hosaka, Appl. Phys. A 109, 349 (2012)
H.Y. Jeong, S.K. Kim, J.Y. Lee, S.-Y. Choi, Appl. Phys. A 102, 967 (2011)
H. Lv, T. Tang, Appl. Phys. A 102, 1015 (2011)
D. Lee, Y. Sung, I. Lee, J. Kim, H. Sohn, D.-H. Ko, Appl. Phys. A 102, 997 (2011)
E.-K. Lai, W.-C. Chien, Y.-C. Chen, T.-J. Hong, Y.-Y. Lin, K.-P. Chang, Y.-D. Yao, P. Lin, S.-F. Horng, J. Gong, S.-C. Tsai, C.-H. Lee, S.-H. Hsieh, C.-F. Chen, Y.-H. Shih, K.-Y. Hsieh, R. Liu, C.-Y. Lu, Jpn. J. Appl. Phys. 49, 04DD17 (2010)
X. Cao, X. Li, X. Gao, W. Yu, X. Liu, Y. Zhang, L. Chen, X. Cheng, J. Appl. Phys. 106, 073723 (2009)
W. Guan, S. Long, Q. Liu, M. Liu, W. Wang, IEEE Electron Device Lett. 29, 434 (2008)
A. Sawa, Mater. Today 11, 28 (2008)
A. Baikalov, Y.Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y.Y. Sun, Y.Y. Xue, C.W. Chu, Appl. Phys. Lett. 83, 957 (2003)
Y.L. Chung, P.Y. Lai, Y.C. Chen, J.S. Chen, ACS Appl. Mater. Interfaces 3, 1918 (2011)
J.J. Huang, G.L. Lin, C.W. Kuo, W.C. Chang, T.H. Hou, in Proc. Int. Semiconductor Device Research Symp. Conf. (ISDRS) (2009), p. 1
U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, IEEE Trans. Electron Devices 56, 193 (2009)
K.-L. Lin, T.-H. Hou, J. Shieh, J.-H. Lin, C.-T. Chou, Y.-J. Lee, J. Appl. Phys. 109, 084104 (2011)
H.-Y. Lee, P.-S. Chen, C.-C. Wang, S. Maikap, P.-J. Tzeng, C.-H. Lin, L.-S. Lee, M.-J. Tsai, Jpn. J. Appl. Phys. 46, 2175 (2007)
H. Lv, M. Wang, H. Wan, Y. Song, W. Luo, P. Zhou, T. Tang, Y. Lin, R. Huang, S. Song, J.G. Wu, H.M. Wu, M.H. Chi, Appl. Phys. Lett. 94, 213502 (2009)
H.Y. Jeong, J.Y. Lee, S.Y. Choi, Adv. Funct. Mater. 20, 3912 (2010)
H.Y. Jeong, J.Y. Lee, S.Y. Choi, arXiv:1007.2463 (2010)
J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, ed. by E. Prairie (Perkin-Elmer Corp., Waltham, 1992), p. 181
F. Sen, G. Gökağç, J. Phys. Chem. C 111, 5715 (2007)
O. Bose, E. Kemnitz, A. Lippitz, W.E.S. Unger, Fresenius J. Anal. Chem. 358, 175 (1997)
J.-C. Wang, Y.-R. Ye, J.-S. Syu, P.-R. Wu, C.-I. Wu, P.-S. Wang, J.-H. Chang, Jpn. J. Appl. Phys. 52, 04CD07 (2013)
A. Kovács, P.B. Barna, J.L. Lábár, Thin Solid Films 433, 78 (2003)
G. Zhang, Z.-G. Shao, W. Lu, F. Xie, H. Xiao, X. Qin, B. Yi, Appl. Catal. B, Environ. 132–133, 183 (2013)
Acknowledgements
This work was supported by the National Science Council, R.O.C. under the contract No. of NSC101-2221-E-182-053.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Wang, JC., Jian, DY., Ye, YR. et al. Platinum–aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory. Appl. Phys. A 113, 37–40 (2013). https://doi.org/10.1007/s00339-013-7874-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-013-7874-1