Abstract
The characteristics of resistive switching of TiN/HfO2/Ti/HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current–voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfO x interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.
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Lee, D., Sung, Y., Lee, I. et al. Enhanced bipolar resistive switching of HfO2 with a Ti interlayer. Appl. Phys. A 102, 997–1001 (2011). https://doi.org/10.1007/s00339-011-6312-5
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DOI: https://doi.org/10.1007/s00339-011-6312-5