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Engineering oxide resistive switching materials for memristive device application

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Abstract

Based on a unified physical model and first-principle calculations, a material-oriented methodology has been proposed to control the bipolar switching behavior of an oxide-based resistive random access memory (RRAM) cell. According to the material-oriented methodology, the oxide-based RRAM cell can be designed by material engineering to achieve the required device performance. In this article, a Gd-doped HfO2 RRAM cell with excellent bipolar switching characteristics is developed to meet the requirements of memristive device application. The typical memristive characteristics of the Gd-doped HfO2 RRAM cell are presented, and the mechanism is discussed.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Lifeng Liu, Bing Chen, Bin Gao, Feifei Zhang, Yuansha Chen, Xiaoyan Liu, Yi Wang, Ruqi Han & Jinfeng Kang

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  1. Lifeng Liu
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  2. Bing Chen
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  3. Bin Gao
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  4. Feifei Zhang
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  6. Xiaoyan Liu
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  8. Ruqi Han
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  9. Jinfeng Kang
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Correspondence to Jinfeng Kang.

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Liu, L., Chen, B., Gao, B. et al. Engineering oxide resistive switching materials for memristive device application. Appl. Phys. A 102, 991–996 (2011). https://doi.org/10.1007/s00339-011-6331-2

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  • DOI: https://doi.org/10.1007/s00339-011-6331-2

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