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Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting

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Abstract

We fabricated sulfur-doped black silicon by metal-assist chemical etching (MCE) and ion implanting. The morphologies of silicon nanowire (SiNW) arrays and the concentration of sulfur in black silicon were analyzed by scanning electron microscope (SEM). Sulfur-doped black silicon shows higher absorption in entire 0.3–2.5 μm wavelength range as compared to undoped SiNW arrays and flat silicon. The changes in the absorption spectra of black silicon with different etching durations and annealing temperature are also shown. Upon annealing, the absorption decreases significantly in 2–2.5 μm wavelength region. The novel results clearly indicate that sulfur implanting could produce below band gap absorption in the silicon substrate.

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Acknowledgements

This work was mostly supported by the National Basic Research Program of China (Grant No. 2012CB934200), and National Natural Science Foundation of China (Contract Nos. 50990064, 61076009, 61204002).

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Kong Liu, Shengchun Qu, Furui Tan, Yu Bi, Shudi Lu & Zhanguo Wang

  2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Xinhui Zhang

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  1. Kong Liu
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  2. Shengchun Qu
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  3. Xinhui Zhang
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  4. Furui Tan
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  5. Yu Bi
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  7. Zhanguo Wang
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Correspondence to Shengchun Qu.

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Liu, K., Qu, S., Zhang, X. et al. Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting. Appl. Phys. A 114, 765–768 (2014). https://doi.org/10.1007/s00339-013-7682-7

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  • DOI: https://doi.org/10.1007/s00339-013-7682-7

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