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Electronic properties investigation of silicon supersaturated with tellurium

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Abstract

Hall measurements as a function of temperature and current–voltage (I–V) measurements have been used to study the electronic properties of silicon supersaturated with tellurium (Te). The samples were fabricated by ion implantation, followed by thermal annealing at different temperatures in N2 and by rapid quenching. The experiment results show that the effects on the resistivity and on the Hall effect of samples implanted with high doses of Te are almost insensitive to temperature. This is not consistent with those of low dose Te implanted samples. The dark I–V characteristics and white light I–V characteristics of the junction between the high dose Te implanted layer and the substrate were also investigated. The pn junctions of samples with non equilibrium dopant concentrations exhibit decreased rectification, but increased photon to electron conversion efficiency.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Xinyi Li, Peide Han, Lipeng Gao, Xue Mao & Shaoxu Hu

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  1. Xinyi Li
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  2. Peide Han
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  3. Lipeng Gao
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  4. Xue Mao
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  5. Shaoxu Hu
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Correspondence to Xinyi Li.

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Li, X., Han, P., Gao, L. et al. Electronic properties investigation of silicon supersaturated with tellurium. Appl. Phys. A 105, 1021–1024 (2011). https://doi.org/10.1007/s00339-011-6537-3

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