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On the stoichiometry condition for the formation of cubic boron nitride films

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Abstract

The stoichiometry of boron nitride (BN) films, which are deposited with self-bias-assisted radio frequency (rf) magnetron sputtering of a hexagonal boron nitride (hBN) target, has been investigated with Auger electron spectroscopy (AES) and the MCs+-mode of secondary ion mass spectroscopy (MCs+-SIMS) for the sake of a better understanding of the growth mechanism of cubic boron nitride (cBN). The cubic fraction of the films is determined with Fourier-transform infrared spectroscopy (FTIR). It is shown that full stoichiometry of the deposited films is decisive for cBN-growth. A substrate bias voltage can increase the N concentration of a growing film under N-deficient deposition conditions. This effect is shown to be temperature dependent.

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Authors and Affiliations

  1. Department of Physics and Institute for Surface and Thin Film Analysis (IFOS), University of Kaiserslautern, 67653, Kaiserslautern, Germany

    Y.K. Le & H. Oechsner

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  1. Y.K. Le
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  2. H. Oechsner
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Correspondence to H. Oechsner.

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PACS

52.77.Dq; 81.15.Cd; 68.55.Nq

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Le, Y., Oechsner, H. On the stoichiometry condition for the formation of cubic boron nitride films. Appl Phys A 78, 681–685 (2004). https://doi.org/10.1007/s00339-003-2281-7

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