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The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride

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Abstract

The effect of doping of cubic boron nitride with beryllium, silicon, sulfur, and magnesium on the lattice parameters, electrical conductivity, and ESR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100°C in comparison with the conventional synthesis from melts of the Mg–B–N system at 4.2 GPa and 1400°C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.

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ACKNOWLEDGMENTS

The authors are grateful to A. O. Semenkovich (All-Russian Research Institute of Synthesis of Mineral Raw Materials, VNIISIMS) for his assistance in conducting ESR measurements.

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Authors and Affiliations

  1. LSPM–CNRS, Université Sorbonne Paris Nord, 93430, Villetaneuse, France

    V. A. Mukhanov & V. L. Solozhenko

  2. Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, UMR CNRS 7590, 75005, Paris, France

    A. Courac

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  1. V. A. Mukhanov
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Correspondence to V. L. Solozhenko.

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Translated by O. Kadkin

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Mukhanov, V.A., Courac, A. & Solozhenko, V.L. The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride. J. Superhard Mater. 42, 377–387 (2020). https://doi.org/10.3103/S1063457620060088

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