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Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys

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Abstract

An accurate four-line ac electrical resistance measurement (ERM) apparatus was developed. By using the ERM the crystallization kinetics of amorphous Ni80P20, FeZr2, Fe86B14 alloys were investigated. The experimental results show that the ERM can identify the early stage of crystallization in amorphous alloys. The ERM detects a crystallization temperature range obviously wider than the DSC does, indicating that the ERM is more sensitive to the structure evolution in crystallization. For the eutectic or polymorphic crystallization, three distinct processes can be identified from the measured resistance variation: (i) crystal nucleation, (ii) subsequent growth of crystal nuclei, and (iii) coarsening of the crystallites. In the early stage of the primary crystallization, the ERM results reflect the nucleation information as well.

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Authors and Affiliations

  1. State Key Laboratory for RSA, Institute of Metal Research, Chinese Academy of Sciences, 110015, Shenyang, China

    Wang Yaping & Lu Ke

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  1. Wang Yaping
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  2. Lu Ke
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Correspondence to Lu Ke.

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Wang, Y., Lu, K. Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys. Sci. China Ser. E-Technol. Sci. 44, 33–41 (2001). https://doi.org/10.1007/BF02916723

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