Skip to main content
SpringerLink
Log in

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A.G. Milnes and A.Y. Polyakov,Solid State Electron. 36, 803 (1993).

    Article  CAS  Google Scholar 

  2. H.Q. Le,G.W. Turner, S.J. Eglash and H.K. Choi,Appl. Phys. Lett. 64, 152 (1994).

    Article  CAS  Google Scholar 

  3. Y.K. Su and F.S. Juang,J. Mater. Sci. 25, 843 (1990).

    CAS  Google Scholar 

  4. C. Anayama, T. Tanahashi, H. Kuwatsuka, S. Nishiyama, S. Isozumi and K. Nakajima,Appl. Phys. Lett. 56, 239 (1990).

    Article  CAS  Google Scholar 

  5. M. Lee, D.J. Nicholas, K.E. Singer and B. Hamilton,J. Appl. Phys. 59, 2895 (1986).

    Article  CAS  Google Scholar 

  6. S.K. Haywood, N.J. Mason and P.J. Walker,J. Cryst. Growth 93, 56 (1988).

    Article  CAS  Google Scholar 

  7. T.S. Wu, Y.K. Su, F.S. Juang, N.Y. Li and K.J. Gan,Proc. SPIE 1361, 23 (1990).

    Google Scholar 

  8. Y.K. Su, F.S. Juang, N.Y. Li, K.J. Gan and T.S. Wu,Solid State Electron. 34, 815 (1991).

    Article  CAS  Google Scholar 

  9. S.K. Haywood, A.B. Henriques, N.J. Mason, R.J. Nicholas and P.J. Walker,Semicond. Sci. Technol. 3, 315 (1988).

    Article  CAS  Google Scholar 

  10. W. Jakowetz, W. Rühle, K. Breuninger and M. Pilkuhn,Phys. Stat. Sol. (a) 12, 169 (1972).

    Article  CAS  Google Scholar 

  11. D.J. Nicholas, M. Lee, B. Hamilton and K.E. Singer,J. Cryst. Growth 81, 298 (1987).

    Article  CAS  Google Scholar 

  12. M. Sopanen, T. Koljonen, H. Lipsanen and T. Tuomi,J. Cryst. Growth 145, 492 (1994).

    Article  CAS  Google Scholar 

  13. H. Luquet, L. Gouskov, M. Pérotin, A. Jean, A. Rjeb, T. Zarouri and G. Bougnot,J. Appl. Phys. 60, 3582 (1986).

    Article  CAS  Google Scholar 

  14. W. Guang-Yu and P. Rui-Wu,J. Electron. Mater. 23, 217 (1994).

    Article  Google Scholar 

  15. H. Heinecke, E. Veuhoff, N. Pütz, M. Heyen and P. Balk,J. Electron. Mater. 13, 815 (1984).

    Article  CAS  Google Scholar 

  16. G.B. Stringfellow,Organometallic Vapor-Phase Epitaxy: Theory and Practice (San Diego, CA: Academic Press, 1989), p. 398.

    Google Scholar 

  17. F.S. Juang, Y.K. Su, N.Y. Li, K.J. Gan and T.S. Wu,Jpn. J. Appl. Phys. 30, 207 (1991).

    Article  CAS  Google Scholar 

  18. M. Lakrimi, R.W. Martin, N.J. Nelson, R.J. Nicholas and P.J. Walker,J. Cryst. Growth 124, 395 (1992).

    Article  CAS  Google Scholar 

  19. E.T.R. Chidley, S.K. Haywood, A.B. Henriques, N.J. Mason, R.J. Nicholas and P.J. Walker,Semicond. Sci. Technol. 6,45 (1991).

    Article  CAS  Google Scholar 

  20. C. Woelk and K.W. Benz,J. Cryst. Growth 27, 177 (1974).

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Optoelectronics Laboratory, Helsinki University of Technology, FIN-02150, Espoo, Finland

    T. Koljonen, M. Sopanen, H. Lipsanen & T. Tuomi

Authors
  1. T. Koljonen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Sopanen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Lipsanen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. Tuomi
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Koljonen, T., Sopanen, M., Lipsanen, H. et al. Growth of high-quality GaSb by metalorganic vapor phase epitaxy. J. Electron. Mater. 24, 1691–1696 (1995). https://doi.org/10.1007/BF02676834

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02676834

Key words

Search

Navigation