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Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

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Abstract

The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 μm at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.

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ACKNOWLEDGMENTS

The authors wish to thank M.A. Yagovkina for her help in XRD measurements. TEM studies were conducted on equipment provided by the federal common use center “Materials Science and Diagnostics in Advanced Technology” supported by the Ministry of Science and Higher Education of the Russian Federation (project identifier RFMEFI62117X0018).

Funding

This study was supported in part by the Russian Foundation for Basic Research, grant no. 16-08-01130-a.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    R. V. Levin, B. V. Pushnyi, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskii, N. L. Bazhenov, K. D. Mynbaev, N. V. Pavlov & G. G. Zegrya

  2. ITMO University, 197101, St. Petersburg, Russia

    I. V. Fedorov & K. D. Mynbaev

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  1. R. V. Levin
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  2. B. V. Pushnyi
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  3. I. V. Fedorov
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  5. V. N. Nevedomskii
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  6. N. L. Bazhenov
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  7. K. D. Mynbaev
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Correspondence to R. V. Levin.

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Translated by D. Safin

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Levin, R.V., Pushnyi, B.V., Fedorov, I.V. et al. Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers. Tech. Phys. 64, 1509–1514 (2019). https://doi.org/10.1134/S106378421910013X

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