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Growth kinetics of GaSb by metalorganic vapor phase epitaxy

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Abstract

The growth rates of GaSb by metalorganic vapor phase epitaxy were studied as functions of growth temperatures and partial pressures of precursors. A Langmuir-Hinshelwood model was used to explain the GaSb growth rate in the chemical reaction controlled regime. The relationship between growth kinetics and epilayer qualities was discussed and properties of GaSb were obtained.

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Authors and Affiliations

  1. Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 200050, Shanghai, P.R, China

    Wei Guang-Yu & Peng Rui-Wu

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  1. Wei Guang-Yu
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  2. Peng Rui-Wu
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Guang-Yu, W., Rui-Wu, P. Growth kinetics of GaSb by metalorganic vapor phase epitaxy. J. Electron. Mater. 23, 217–220 (1994). https://doi.org/10.1007/BF02655272

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  • DOI: https://doi.org/10.1007/BF02655272

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