Abstract
Far infrared (10 to 250 cm−1) reflection and transmission spectroscopy is used to characterize the free-carrier and alloy properties of the leading infrared detector material Hg1-xCdxTe and the substrate materials CdTe and CdZnTe. The data yield values for carrier concentration and mobility, the compositional parameter x and film thickness which generally agree with other determinations. The advantages of this contactless nondestructive technique are described. Applications to the newly proposed infrared detector material Hg1-xMnxTe are briefly reviewed.
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Perkowitz, S. Far infrared characterization of Hg1-xCdxTe and related electronic materials. J. Electron. Mater. 14, 551–562 (1985). https://doi.org/10.1007/BF02654024
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DOI: https://doi.org/10.1007/BF02654024