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Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

  • Material Sciences and Industrial Applications
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Abstract

A method of the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. The lower limit of determination is of the order 10−11 g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method have been suggested.

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Authors and Affiliations

  1. Department of Application of Radioisotopes in Metallurgy and Metal Technology, Institute of Nuclear Research, Warsaw, (Poland)

    H. Jaskólska, L. Rowińska & L. Waliś

Authors
  1. H. Jaskólska
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  2. L. Rowińska
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  3. L. Waliś
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Jaskólska, H., Rowińska, L. & Waliś, L. Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon. J. Radioanal. Chem. 38, 29–35 (1977). https://doi.org/10.1007/BF02520180

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  • DOI: https://doi.org/10.1007/BF02520180

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