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Study of the distribution profile of iron ions implanted into silicon

  • Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
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Abstract

Iron ions with energies of 90 and 250 keV and a dose of 1016 cm–2 are implanted into a silicon single crystal with the (110) orientation. The method of Rutherford backscattering in combination with channeling is used to study the distribution profiles of the introduced impurity and also the profiles of the distribution of radiation-induced defects in the crystal lattice. Experimental data are compared with the results of simulation performed using the TRIM software package. It is shown that, at an energy of 4.6 keV/nucleon, the average projected ranges coincide; however, at an energy of 1.6 keV/nucleon, the difference amounts to 35%. In addition, it is shown that the calculation incorrectly takes into account the dose dependence at energies of 1.6–4.6 keV/nucleon.

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Authors and Affiliations

  1. Faculty of Physics, Moscow State University, Moscow, 119991, Russia

    A. V. Kozhemyako & V. S. Chernysh

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991, Russia

    Yu. V. Balakshin, A. A. Shemukhin & V. S. Chernysh

Authors
  1. A. V. Kozhemyako
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  2. Yu. V. Balakshin
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  3. A. A. Shemukhin
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  4. V. S. Chernysh
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Corresponding author

Correspondence to A. V. Kozhemyako.

Additional information

Original Russian Text © A.V. Kozhemyako, Yu.V. Balakshin, A.A. Shemukhin, V.S. Chernysh, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 6, pp. 778–782.

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Kozhemyako, A.V., Balakshin, Y.V., Shemukhin, A.A. et al. Study of the distribution profile of iron ions implanted into silicon. Semiconductors 51, 745–750 (2017). https://doi.org/10.1134/S1063782617060185

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  • DOI: https://doi.org/10.1134/S1063782617060185

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