Abstract
Diamond crystals and films have been success full y synthesized by DC thermal plasma jet CVD at a pressure of I atrn. A novel triple torch plasma reactor has been used to generate a convergent plasma volume to entrain the participating gases. Three coalescing plasma jets produces! by this reactor direct the dissociated and ionized gaseous species onto ( 100) silicon wafer substrates where the diamond grows. In a typical 10-min run, depending on the method of .substrate preparation, either microcrystals with sizes up to 8 μm or continuous films with thicknesses of 1–2 μm have been obtained. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy have been used for the characterization of the crystals and of the films.
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References
W. A. Yarbrough and R. Messier,Science 247, 688 (1990).
K. E. Spear,J. Am. Ceram. Soc. 72, 171 (1989).
J. C. Angus, F. A. Buck, M. Sunkara, T. F. Groth, C. C. Hayman, and R. Gat,MRS Bull., October, p.38 (1989).
R. C. DeVries,Annu. Rev. Mater. Sci. 17, 167 (1987).
S. Matsumoto, Y. Sato, M. Tsutsumi, and N. Setaka,J. Mater. Sci. 17, 3106 (1982).
A. R. Badzian, T. Badzian, R. Roy, R. Messier, and K. E. Spear,Mater. Res. Bull. 23, 531 (1988).
S. Matsumoto, M. Hino, and T. Kobayashi,Appl. Phys. Lett. 51, 737 (1987).
K. Suzuki, A. Sawabe, and T. Inuzuka,Jpn. J. Appl. Phys. 29, 153 (1990).
B. Singh, O. R. Mesker, A. W. Levine, and Y. Arie,Appl. Phys. Lett. 52, 1658 (1988).
Y. Tzeng, C. Cutshaw, R. Phillips, T. Srivinyunon, A. Ibrahim, and B. H. Loo,Appl. Phys. Lett. 56, 134 (1990).
N. Ohtake and M. Yoshikawa,J. Electrochem. Soc. 137, 717 (1990).
K. Kurihara, K. Sasaki, M. Kawarada, and N. Koshino,Appl Phys. Lett. 52, 437 (1988).
S. Matsumoto, “Deposition of Diamond from Thermal Plasma,”Diamond and DiamondLike Materials Synthesis, MRS Extended Abstracts, 1988, G. H. Johnson, A. R. Badzian, and M. W. Geis, eds., (Materials Research Society, Pittsburgh, Pennsylvania, 1988), p. 119.
M. A. Cappelli, T. G. Owano, and C. H. Kruger,J. Mater. Res. 5, 2326 (1990).
T. R. Anthony,Vacuum 41, 1356 (1990).
F. G. Celii and J. E. Butler,Appl. Phys. Lett. 54, 1031 (1989).
J. A. Mucha, D. L. Flamm, and D. E. Ibbotson,J. Appl. Phys. 65, 3448 (1989).
H. Sugai, H. Kojima, A. Ishida, and H. Toyoda,Appl. Phys. Left. 56, 2616 (1990).
S. J. Harris and A. M. Weiner,J. Appl. Phys. 67, 6520 (1990).
Z. P. Lu and E. Pfender, “Synthesis of AIN Powder in a Triple Torch Plasma System,”Proc. of the 9th Int. Sump. on Plasma Chem., Pugnochiuso, Italy, 1989, Vol. 2, R. d'Agostino, ed., (University of Bari, Italy, 1989), p. 675.
Y. Mitsuda, T. Yoshida, and K. Akashi, “The Growth of Diamond in MW Plasma under Low Pressure,”Proc. of the 8th Int. Svmp. on Plasma Chem., Tokyo, Japan, 1987, Vol. 4, K. Akashi and A. Kinbara, eds., (LOC, Tokyo, 1987), p. 2469.
P. K. Bachmann and H. Lydtin, “Diamond Forming Discharge,”Mater. Res. Soc. Svmp. Proc., Vol. 165,Characterization of Plasma-Enhanced CVD Processes, Boston, Massachusetts, 1989, G. Lucovsky, D. E. Ibbotson, and D. W. Hess, eds., (Materials Research Society, Pittsburgh, Pennsylvania, 1989), p. 181.
B. V. Spitsyn,J. Cryst. Growth 99, 1162 (1990).
W. Piekarczyk, R. Messier, R. Roy, and C. Engdahl,J. Crust. Growth 106, 279 (1990).
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Lu, Z.P., Stachowicz, L., Kong, P. et al. Diamond synthesis by DC thermal plasma CVD at 1 atm. Plasma Chem Plasma Process 11, 387–394 (1991). https://doi.org/10.1007/BF01458918
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DOI: https://doi.org/10.1007/BF01458918