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Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

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Abstract

Discrete electron-molecule processes relevant to SF6 etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF6, SO2, SOF2, SO2F2, SOF4, and SF4, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF6 by-products in SF6.

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Authors and Affiliations

  1. Department of Chemistry and Biochemistry, University of Maryland, 20742, College Park, Maryland

    H. -X. Wan & J. H. Moore

  2. National Institute of Standards and Technology, 20899, Gaithersburg, Maryland

    J. K. Olthoff & R. J. Van Brunt

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  1. H. -X. Wan
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  2. J. H. Moore
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  3. J. K. Olthoff
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  4. R. J. Van Brunt
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Wan, H.X., Moore, J.H., Olthoff, J.K. et al. Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products. Plasma Chem Plasma Process 13, 1–16 (1993). https://doi.org/10.1007/BF01447167

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  • DOI: https://doi.org/10.1007/BF01447167

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