Abstract
Ti-Si-N thin films were deposited on HSS substrates at 560°C using plasmaenhanced chemical vapor deposition. Feed gases used were TiCl4, SiCl4, N2, and H2. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases. The Si content in the film varied in the range of O to 40 at. %. It was jbund that a small addition of Si to a TiN film improved the morphology significantlv, showing dense and glasslike structure. Also a much smootherand more homogeneous interface between thefilm and the substrate was obtained. The Ti-Si- N films containing 10–15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm2, much higher than that of TiN films.
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Shizhi, L., Yulong, S. & Hongrui, P. Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition. Plasma Chem Plasma Process 12, 287–297 (1992). https://doi.org/10.1007/BF01447027
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DOI: https://doi.org/10.1007/BF01447027